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Volumn , Issue , 2007, Pages 133-136
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GaN-HEMT epilayers on diamond substrates: Recent progress
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Author keywords
Diamond; Gallium nitride; High electron mobility transistors; Power; Thermal management; X band
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Indexed keywords
DIAMOND COMPOSITES;
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT);
HIGH THERMAL CONDUCTIVITY;
HIGH-POWER AMPLIFIERS;
MATERIAL CHARACTERIZATIONS;
POWER;
X-BAND;
X-BAND RADAR SYSTEMS;
EPILAYERS;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
HIGH ELECTRON MOBILITY TRANSISTORS;
POWER AMPLIFIERS;
RADAR SYSTEMS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SUBSTRATES;
TEMPERATURE CONTROL;
THERMAL CONDUCTIVITY;
DIAMONDS;
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EID: 84887440422
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (38)
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References (9)
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