GaN-HEMT epilayers on diamond substrates: Recent progress

2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007

Volumn , Issue , 2007, Pages 133-136

  Francis, D ^a   Wasserbauer, J ^a   Faili, F ^a   Babic, D ^a   Ejeckam, F ^a   Hong, W ^b   Specht, P ^b   Weber, E ^b  

^a Group4 Labs   (United States)

^b No 1760   (United States)

Author keywords

Diamond; Gallium nitride; High electron mobility transistors; Power; Thermal management; X band

Indexed keywords

DIAMOND COMPOSITES; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH THERMAL CONDUCTIVITY; HIGH-POWER AMPLIFIERS; MATERIAL CHARACTERIZATIONS; POWER; X-BAND; X-BAND RADAR SYSTEMS;

EPILAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; POWER AMPLIFIERS; RADAR SYSTEMS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; TEMPERATURE CONTROL; THERMAL CONDUCTIVITY;

DIAMONDS;

EID: 84887440422     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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