메뉴 건너뛰기




Volumn , Issue , 2007, Pages 133-136

GaN-HEMT epilayers on diamond substrates: Recent progress

Author keywords

Diamond; Gallium nitride; High electron mobility transistors; Power; Thermal management; X band

Indexed keywords

DIAMOND COMPOSITES; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH THERMAL CONDUCTIVITY; HIGH-POWER AMPLIFIERS; MATERIAL CHARACTERIZATIONS; POWER; X-BAND; X-BAND RADAR SYSTEMS;

EID: 84887440422     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (38)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.