A1N heteroepitaxial and oriented films grown on (111), (110) and (100) natural diamond faces

Diamond and Related Materials

Volumn 7, Issue 2-5, 1998, Pages 356-359

  Spitsyn, B V ^a   Hsu, W L ^b   Gorodetsky, A E ^a   Zalavutdinov, R Kh ^a   Zakharov, A P ^a   Bouilov, L L ^a   Stoyan, V P ^c   Dvoryankin, V F ^d   Chaplygin, G V ^e  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c MOSCOW STATE UNIVERSITY   (Russian Federation)

^d INST OF RADIO ENG AND ELECTRONICS   (Russian Federation)

^e SHUBNIKOV INSTITUTE OF CRYSTALLOGRAPHY   (Russian Federation)

Author keywords

Aluminum nitride; CVD; Diamond; Heteroepitaxy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIAMONDS; EPITAXIAL GROWTH; NITRIDES; SUBSTRATES;

HETEROEPITAXY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0031995293     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(97)00215-x     Document Type: Article

References (6)

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2. J.H. Edgar, Prospects for device implementation of wide band gap semiconductors, J. Mater. Res. 7 (1992) 235-252.
3. V.P. Stoyan et al., Paper presented at the 3rd International Symposium on Diamond Films, St Petersburg, Russia, 1996.
4. T.E. Derry, L. Smith, J.F. van der Veen, Ion scattering determination of the atomic arrangement of polished diamond (111) surfaces before and after reconstruction, Surf. Sci. 167 (1986) 502-518.
5. NBS, ASTM, Monograph, 1974, vol. 25, section 12.
6. W.J. Meng, J.A. Sell, T.A. Perry, Growth of Al thin films on Si (111) and Si (001): structural characteristics and development of intrinsic stresses, J. Appl. Phys. 75 (1994) 3446-3455.