Coalescence aspects of III-nitride epitaxy

Journal of Applied Physics

Volumn 101, Issue 5, 2007, Pages

  Lebedev, V ^a   Tonisch, K ^a   Niebelschutz F ^a   Cimalla, V ^a   Cengher, D ^a   Cimalla, I ^a   Mauder, Ch ^a   Hauguth, S ^a   Ambacher, O ^a   Morales, F M ^b   Lozano, J G ^b   Gonzalez D ^b  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF CÁDIZ   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COALESCENCE; DIFFUSION; DISLOCATIONS (CRYSTALS); EPILAYERS; EPITAXIAL GROWTH; MORPHOLOGY; STACKING FAULTS; X RAY DIFFRACTION;

DOMAIN BOUNDARIES; GROWTH MODEL; LATERAL GROWTH; WURTZITE;

NITRIDES;

EID: 33947321895     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2464195     Document Type: Article

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