On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes

Journal of Crystal Growth

Volumn 311, Issue 23-24, 2009, Pages 4685-4691

  Bohnen, Tim ^a   de Jong, Aryan E F ^a   van Enckevort, Willem J P ^a   Weyher, Jan L ^a,b   van Dreumel, Gerbe W G ^a   Ashraf, Hina ^a   Hageman, Paul R ^a   Vlieg, Elias ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

A1. Defects; A1. Nucleation; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

A1. DEFECTS; A1. NUCLEATION; A3. HYDRIDE VAPOR PHASE EPITAXY; B1. NITRIDES; B2. SEMICONDUCTING GALLIUM COMPOUNDS;

COALESCENCE; CORUNDUM; CRYSTAL GROWTH; DEFECTS; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM NITRIDE; NUCLEATION; PHASE INTERFACES; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; VAPOR PHASE EPITAXY; VAPORS;

GALLIUM ALLOYS;

EID: 71049171695     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.07.045     Document Type: Article

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