GaN growth on single-crystal diamond substrates by metalorganic chemical vapor deposition and hydride vapour deposition

Thin Solid Films

Volumn 443, Issue 1-2, 2003, Pages 9-13

  Hageman, P R ^a   Schermer, J J ^a   Larsen, P K ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

Chemical vapor deposition; Diamond; Epitaxy; Nitrides

Indexed keywords

CRYSTAL ORIENTATION; DIAMONDS; GRAIN SIZE AND SHAPE; HYDRIDES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SINGLE CRYSTALS; VAPOR DEPOSITION; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

OPTICAL QUALITY;

GALLIUM NITRIDE;

EID: 0141865604     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00906-4     Document Type: Article

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