AlGaN/GaN HEMT on (111) single crystalline diamond

Electronics Letters

Volumn 46, Issue 4, 2010, Pages 299-301

  Alomari, M ^a   Dussaigne, A ^b   Martin, D ^b   Grandjean, N ^b   Gaquiere C ^c   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

^b EPFL   (Switzerland)

^c UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; GATE LENGTH; MAXIMUM DRAIN CURRENT; SHEET CHARGE DENSITY; SINGLE CRYSTAL DIAMOND; SINGLE-CRYSTALLINE DIAMOND;

CUTOFF FREQUENCY; DRAIN CURRENT; GALLIUM NITRIDE; SINGLE CRYSTALS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77149166295     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2010.2937     Document Type: Article

References (9)

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