Orthodox etching of HVPE-grown GaN

Journal of Crystal Growth

Volumn 305, Issue 2 SPEC. ISS., 2007, Pages 384-392

  Weyher, J L ^a,b   Lazar, S ^c   Macht, L ^a   Liliental Weber, Z ^d   Molnar, R J ^e   Muller S ^f   Sivel, V G M ^c   Nowak, G ^b   Grzegory, I ^b  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^f FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

A1. Defects; A1. Etching; B1. Nitrides

Indexed keywords

BURGERS VECTOR; CRYSTAL DEFECTS; ETCHING; EUTECTICS; SULFURIC ACID; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

BURGERS VALUES; EDGE COMPONENT; EDGE DISLOCATIONS; ETCHING PARAMETERS;

GALLIUM ALLOYS;

EID: 34347333392     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.03.030     Document Type: Article

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