High quality heteroepitaxial AIN films on diamond

Journal of Applied Physics

Volumn 96, Issue 1, 2004, Pages 895-902

  Vogg, G ^a   Miskys, C R ^b   Garrido, J A ^b   Hermann, M ^b   Eickhoff, M ^b   Stutzmann, M ^b  

^a Fraunhofer Institute Reliability and Microintegration   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIAMONDS; ELECTRONIC PROPERTIES; EVAPORATION; HETEROJUNCTIONS; ION IMPLANTATION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; NUCLEATION; SAPPHIRE; SURFACE ROUGHNESS; THERMODYNAMIC STABILITY; ULTRAVIOLET SPECTROMETERS; X RAY DIFFRACTION ANALYSIS;

CRYSTAL QUALITY; EPITAXIAL ORIENTATIONS; FILM THICKNESS; LATTICE MATCHING EPITAXY;

EPITAXIAL GROWTH;

EID: 3142687097     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1759088     Document Type: Article

References (21)

1. O. Elmazria, V. Mortet, M. El Hakiki, M. Nesladek, and P. Alnot, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 50, 710 (2003).
2. V. Mortet et al., Diamond Relat. Mater. 12, 723 (2003).
3. C. R. Miskys, J. A. Garrido, C. E. Nebel, M. Hermann, O. Ambacher, M. Eickhoff, and M. Stutzmann, Appl. Phys. Lett. 82, 290 (2003).
4. Z. Teukam et al., Nat. Mater. 21, 482 (2003).
5. S. Koizumi, K. Watanabe, M. Hasegawa, and H. Kanda, Science 292, 1899 (2001).
6. M. B. Assouar, O. Elmazria, L. Le Brizoual, and P. Alnot, Diamond Relat. Mater. 11, 413 (2002).
7. P. R. Chalker, T. B. Joyce, C. Johnston, J. A. A. Crossley, J. Huddlestone, M. D. Whitfield, and R. B. Jackman, Diamond Relat. Mater. 8, 309 (1999).
8. B. V. Spitsyn et al., Diamond Relat. Mater. 7, 356 (1998).
9. A. E. Gorodetsky, R. Kh. Zalavutdinov, A. P. Zakharov, W. L. Hsu, B. V. Spitsyn, L. L. Bouilov, and V. P. Stoyan, Diamond Relat. Mater. 8, 1267 (1999).
10. R. Zeisel, M. W. Bayed, S. T. B. Goennenwein, R. Dimitrov, O. Ambacher, M. S. Brandt, and M. Stutzmann, Phys. Rev. B 61, R16283 (2000).
11. K. Dovidenko, S. Oktyabrsky, J. Narayan, and M. Razeghi, J. Appl. Phys. 79, 2439 (1996).
12. V. Lebedev, J. Jinschek, J. Kräußlich, U. Kaiser, B. Schröter, and W. Richter, J. Cryst. Growth 230, 426 (2001).
13. J.-H. Song, T. Chikyow, Y.-Z. Yoo, P. Ahmet, and H. Koinuma, Jpn. J. Appl. Phys., Part 2 41, L1291 (2002).
14. V. Lebedev, J. Jinschek, U. Kaiser, B. Schröter, W. Richter, and J. Kräußlich, Appl. Phys. Lett. 76, 2029 (2000).
15. R. D. Vispute, J. Narayan, H. Wu, and K. Jagannadham, J. Appl. Phys. 77, 4724 (1995).
16. M. Tanaka, S. Nakahata, G. Sogaba, H. Nakata, and M. Tabioka, Jpn. J. Appl. Phys., Part 2 36, L1062 (1997).
17. B. E. Warren, X-Ray Diffraction (Addison-Wesley, Reading, MA, 1969).
18. O. Ambacher, R. Dimitrov, D. Lentz, T. Metzger, W. Rieger, and M. Stutzmann, J. Cryst. Growth 170, 335 (1997).
19. S. Karmann, H. P. D. Schenk, U. Kaiser, A. Fissel, and W. Richter, Mater. Sci. Eng., B 50, 228 (1997).
20. R. Dimitrov, M. Murphy, J. Smart, W. Schaff, J. R. Shealy, L. F. Eastman, O. Ambacher, and M. Stutzmann, J. Appl. Phys. 87, 3375 (2000).
21. J. Narayan and B. C. Larson, J. Appl. Phys. 93, 278 (2003).