Growth of GaN on nano-crystalline diamond substrates

Diamond and Related Materials

Volumn 18, Issue 5-8, 2009, Pages 1043-1047

  van Dreumel, G W G ^a   Buijnsters, J G ^a   Bohnen, T ^a   ter Meulen, J J ^a   Hageman, P R ^a   van Enckevort, W J P ^a   Vlieg, E ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

Chemical vapour deposition (CVD); Gallium nitride (GaN); Heterostructures; Synthetic diamond

Indexed keywords

CHEMICAL VAPOUR DEPOSITION; CHEMICAL VAPOUR DEPOSITION (CVD); CRYSTALLITE ORIENTATION; DIAMOND SUBSTRATES; DIFFRACTION PEAKS; GAN FILM; GAN LAYERS; GROWTH OF GAN; GROWTH PARAMETERS; HETEROSTRUCTURES; HIGH INTENSITY; METAL-ORGANIC; MOCVD; NANOCRYSTALLINE; OPTICAL QUALITIES; POLYCRYSTALLINE; SEM ANALYSIS; THERMAL MANAGEMENT; WURZITE; XRD MEASUREMENTS; YELLOW LUMINESCENCE;

CHEMICAL VAPOR DEPOSITION; CRYSTALS; DIAMOND FILMS; DIAMONDS; GALLIUM NITRIDE; LIGHT; LUMINESCENCE; MAGNETIC FIELD MEASUREMENT; NANOCRYSTALLINE MATERIALS; ORGANIC CHEMICALS; SEMICONDUCTING GALLIUM; SUBSTRATES; SYNTHETIC DIAMONDS;

GALLIUM ALLOYS;

EID: 67349199944     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.01.027     Document Type: Article

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