Surface polarity dependence of decomposition and growth of GaN studied using in situ gravimetric monitoring

Journal of Crystal Growth

Volumn 246, Issue 3-4, 2002, Pages 230-236

  Koukitu, Akinori ^a   Mayumi, Miho ^a   Kumagai, Yoshinao ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

A1. Etching; A1. Surface processes; A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

CRYSTAL LATTICES; DECOMPOSITION; ETCHING; GALLIUM NITRIDE; GRAVIMETRIC ANALYSIS; HIGH TEMPERATURE EFFECTS; SUBSTRATES; SURFACE PHENOMENA;

GRAVIMETRIC MONITORING (GM);

VAPOR PHASE EPITAXY;

EID: 0037121692     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01746-3     Document Type: Conference Paper

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