Full-wafer characterization of AlGaN/GaN HEMTs on free-standing CVD diamond substrates

IEEE Electron Device Letters

Volumn 31, Issue 2, 2010, Pages 99-101

  Chabak, Kelson D ^a   Gillespie, James K ^a   Miller, Virginia ^a   Crespo, Antonio ^a   Roussos, Jason ^b   Trejo, Manuel ^a   Walker, Dennis E ^a,c   Via, Glen D ^a   Jessen, Gregg H ^a   Wasserbauer, John ^d   Faili, Firooz ^d   Babić, Dubravko I ^d   Francis, Daniel ^d   Ejeckam, Felix ^d  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c Wyle Laboratories   (United States)

^d Group4 Labs   (United States)

Author keywords

Chemical vapor deposited (CVD) diamond substrate; GaN on diamond; High electron mobility transistor (HEMT)

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ATTACHMENT PROCESS; CHEMICAL VAPOR DEPOSITED (CVD) DIAMOND SUBSTRATE; CHEMICAL VAPOR DEPOSITED DIAMOND; CONTACT LITHOGRAPHY; CVD DIAMOND; DIAMOND SUBSTRATES; ELECTRICAL CHARACTERIZATION; ELECTRICAL PROPERTY; GAN HEMTS; POWER PERFORMANCE; POWER-ADDED EFFICIENCY; RF DEVICES; THERMAL SPREADING;

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DIAMONDS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; LITHOGRAPHY; SUBSTRATES; VAPORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 75749102521     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2036574     Document Type: Article

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