Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates

Nanotechnology

Volumn 22, Issue 29, 2011, Pages

  Perez Del Pino A ^a   Gyorgy E ^b,c   Marcus, I C ^a   Roqueta, J ^b   Alonso, M I ^a  

^a INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

^b CSIC   (Spain)

^c NATIONAL INSTITUTE FOR LASER   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION PROCESS; GE QUANTUM DOT; ISLAND MOTION; LASER PARAMETERS; ND : YAG LASERS; PULSE DURATIONS; SELF-ASSEMBLED GE QUANTUM DOTS; SI (100) SUBSTRATE; SI SUBSTRATES; SOLID SOURCE MOLECULAR BEAM EPITAXY; STRUCTURAL VARIATIONS; TEMPERATURE EVOLUTION; THERMAL ANNEALING TREATMENT; THERMAL BEHAVIOURS;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; EPITAXIAL GROWTH; GERMANIUM; IRRADIATION; LASER BEAM EFFECTS; LASER PULSES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NEODYMIUM LASERS; QUANTUM DOT LASERS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SILICON; RADIATION EFFECTS;

PULSED LASERS;

EID: 79960419084     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/29/295304     Document Type: Article

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