Annealing effects on the microstructure of Ge/Si(001) quantum dots

Applied Physics Letters

Volumn 79, Issue 9, 2001, Pages 1258-1260

  Liao, X Z ^a,b   Zou, J ^a   Cockayne, D J H ^c   Wan, J ^d   Jiang, Z M ^d,e   Jin, G ^d   Wang, Kang L ^d  

^a UNIVERSITY OF SYDNEY   (Australia)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF OXFORD   (United Kingdom)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039105954     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1398615     Document Type: Article

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