Temperature dependence of the density of molten germanium and silicon measured by a newly developed Archimedian technique

Journal of Crystal Growth

Volumn 203, Issue 1, 1999, Pages 75-79

  Nakanishi, H ^a   Nakazato, K ^a   Abe, K ^a   Maeda, S ^a   Terashima, K ^a  

^a SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (SPECIFIC GRAVITY); MOLTEN MATERIALS; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SURFACE TENSION; THERMAL EFFECTS;

ARCHIMEDIAN TECHNIQUE;

CRYSTAL GROWTH FROM MELT;

EID: 0032649114     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00089-5     Document Type: Article

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8. H. Nakanishi, K. Nakazato, S. Asaba, K. Abe, S. Maeda, K. Terashima, Mater. Res. Bull., submitted.