Raman study of self-assembled SiGe nanoislands grown at low temperatures

Nanotechnology

Volumn 16, Issue 9, 2005, Pages 1464-1468

  Valakh, M Ya ^a   Yukhymchuk, V O ^a   Dzhagan, V M ^a   Lytvyn, O S ^a   Milekhin, A G ^b   Nikiforov, A I ^b   Pchelyakov, O P ^b   Alsina, F ^c   Pascual, J ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; RAMAN SCATTERING; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

SEMICONDUCTOR NANOSTRUCTURES; SILICON LAYERS; SURFACE DIFFUSION; THIN OXIDIZED LAYERS;

SILICON COMPOUNDS;

EID: 23444445155     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/16/9/007     Document Type: Article

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