Detailed investigation of Ge-Si interdiffusion in the full range of Si1-x Gex (0x1) composition

Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

  Gavelle, Mathieu ^a   Bazizi, El Mehdi ^a   Scheid, Emmanuel ^a   Fazzini, Pier Francesco ^a   Cristiano, Fuccio ^a   Armand, Claude ^b   Lerch, Wilfried ^c   Paul, Silke ^c   Campidelli, Yves ^d   Halimaoui, Aomar ^d  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b INSAT   (France)

^c MATTSON THERMAL PRODUCTS GMBH   (United States)

^d STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CESIUM; CESIUM COMPOUNDS; CHEMICAL ANALYSIS; DIFFUSION; HETEROJUNCTIONS; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; LANTHANUM COMPOUNDS; MASS SPECTROMETRY; METALLIC COMPOUNDS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON ALLOYS;

BOLTZMANN; DELTA LAYERS; DEPTH PROFILES; EFFECT OF IN; EMPIRICAL MODELS; EXPONENTIAL INCREASES; GE CONCENTRATIONS; GE CONTENTS; GE DIFFUSIONS; IMPORTANT VALUES; INTER DIFFUSIONS; INTERDIFFUSION COEFFICIENTS; MISFIT DISLOCATIONS; NH3 ANNEALING; SECONDARY IONS; SI DIFFUSIONS; SI INTERDIFFUSION; SI-GE ALLOYS; SOLID SOURCES; VACANCY MECHANISMS;

GERMANIUM;

EID: 58149269008     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3033378     Document Type: Article

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