The effect of excimer laser annealing on ZnO nanowires and their field effect transistors

Nanotechnology

Volumn 20, Issue 9, 2009, Pages

  Maeng, Jongsun ^a   Heo, Sungho ^a,b   Jo, Gunho ^a   Choe, Minhyeok ^a   Kim, Seonghyun ^a   Hwang, Hyunsang ^a   Lee, Takhee ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; CHEMICAL BONDINGS; EXCIMER LASER ANNEALING; LASER ANNEALING; N-TYPE DOPANTS; NEGATIVE GATES; ON CURRENTS; THRESHOLD VOLTAGE SHIFTS; X-RAY PHOTOELECTRON SPECTROSCOPIES; ZNO NANOWIRES;

ANNEALING; BINDING ENERGY; CHEMICAL BONDS; ELECTRIC WIRE; EXCIMER LASERS; GAS LASERS; NANOWIRES; OPTICAL PROPERTIES; OXYGEN; OXYGEN VACANCIES; SEMICONDUCTING ZINC COMPOUNDS; THRESHOLD VOLTAGE; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

NANOWIRE; OXYGEN; UNCLASSIFIED DRUG; ZINC OXIDE NANOWIRE; NANOMATERIAL; ZINC OXIDE;

ARTICLE; BINDING AFFINITY; CHEMICAL BINDING; CHEMICAL STRUCTURE; CRYSTALLIZATION; ELECTRIC POTENTIAL; EXCIMER LASER; FIELD EFFECT TRANSISTOR; OPTICAL ROTATION; PRIORITY JOURNAL; X RAY PHOTOELECTRON SPECTROSCOPY; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; LASER; LIGHT; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; RADIATION EXPOSURE; SEMICONDUCTOR;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LASERS; LIGHT; MATERIALS TESTING; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; TRANSISTORS; ZINC OXIDE;

EID: 65449135205     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/9/095203     Document Type: Article

References (27)

1. Goldberger J, Hochbaum A I, Fan R and Yang P 2006 Nano Lett. 6 973
2. Huang Y, Duan X and Lieber C M 2005 Small 1 142
3. Yuan G-D, Zhang W-J, Jie J-S, Fan X, Tang J-X, Shafiq I, Ye Z-Z, Lee C-S and Lee S-T 2008 Adv. Mater. 20 168
4. Liao L et al 2008 J. Appl. Phys. 104 076104
5. Park W I, Yi G-C, Kim M and Pennycook S J 2003 Adv. Mater. 15 526
6. Wang Z L and Song J 2006 Science 312 242
7. Zhu R, Wang D, Xiang S, Zhou Z and Ye X 2008 Nanotechnology 19 285712
8. Remashan K, Hwang D-K, Park S-J and Jang J-H 2008 Japan. J. Appl. Phys. 47 2848
9. Oh M-S, Hwang D-K, Lim J-H, Choi Y-S and Park S-J 2007 Appl. Phys. Lett. 91 042109
10. Hatanaka Y, Niraula M, Nakamura A and Aoki T 2001 Appl. Surf. Sci. 175/176 462
11. Smith P M, Carey P G and Sigmon T W 1997 Appl. Phys. Lett. 70 342
12. Aoki T, Hatanaka Y and Look D C 2000 Appl. Phys. Lett. 76 3257
13. Zhao Y and Jiang Y 2008 J. Appl. Phys. 103 114903
14. Nagase T, Ooie T and Sakakibara J 1999 Thin Solid Films 357 151
15. Li M, Anderson W, Chokshi N, DeLeon R L and Tompa G 2006 J. Appl. Phys. 100 053106
16. Park S-H, Kim S-H and Han S-W 2007 Nanotechnology 18 055608
17. Chang P-C, Chien C-J, Stichtenoth D, Ronning C and Lu J G 2007 Appl. Phys. Lett. 90 113101
18. Hagemark K I 1976 J. Solid State Chem. 16 293
19. Lott K, Shinkarenko S, Kirsanova T, Türn L, Grebennik A and Vishnjakov A 2005 Phys. Status Solidi c 2 1200
20. Zhang S B, Wei S-H and Zunger A 2001 Phys. Rev. B 63 075205
21. Wang L and Giles N C 2003 J. Appl. Phys. 94 973
22. Zhang X T, Liu Y C, Zhi Z Z, Zhang J Y, Lu Y M, Shen D Z, Xu W, Fan X W and Kong X G 2002 J. Lumin. 99 149
23. Rosa E D L, Seplveda-Guzman S, Reeja-Jayan B, Torres A, Salas P, Elizondo N and Yacaman M J 2007 J. Phys. Chem. C 111 8489
24. Lu Y F, Ni H Q, Mai Z H and Ren Z M 2000 J. Appl. Phys. 88 498
25. Wang D, Chang Y-L, Wang Q, Gao J, Farmer D B, Gordon R G and Dai H 2004 J. Am. Chem. Soc. 126 11602
26. Maeng J, Jo G, Kwon S-S, Song S, Seo J, Kang S-J, Kim D-Y and Lee T 2008 Appl. Phys. Lett. 92 233120
27. Sze S M and Ng K K 2007 Physics of Semiconductor Devices (New Jersey: Wiley)