The intermixing and strain effects on electroluminescence of SiGe dots

Journal of Applied Physics

Volumn 102, Issue 5, 2007, Pages

  Liao, M H ^a   Lee, C H ^b   Hung, T A ^b   Liu, C W ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; ENERGY DISPERSIVE SPECTROSCOPY; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON;

ELECTROLUMINESCENCE ENERGY; INTERMIXING; STRAIN EFFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34548659570     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2777686     Document Type: Article

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