Atomic layer deposition of ruthenium using the novel precursor bis(2,6,6-trimethyl-cyclohexadienyl)ruthenium

Chemistry of Materials

Volumn 23, Issue 10, 2011, Pages 2650-2656

  Gregorczyk, Keith ^a   Henn Lecordier, Laurent ^a,c   Gatineau, Julien ^b   Dussarrat, Christian ^b   Rubloff, Gary ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b AIR LIQUIDE   (France)

^c Cambridge NanoTech Inc   (United States)

Author keywords

Atomic layer deposition; Ruthenium; Thin film

Indexed keywords

ALD PRECURSOR; H-TERMINATED SI SURFACES; LOW GROWTH RATE; NOVEL PRECURSORS; NUCLEATION BARRIER; PRECURSOR PHASIS; TIO;

ATOMIC LAYER DEPOSITION; ATOMS; DIFFERENTIAL SCANNING CALORIMETRY; FILM GROWTH; NUCLEATION; SILICON COMPOUNDS; THERMOGRAVIMETRIC ANALYSIS; TITANIUM DIOXIDE;

RUTHENIUM;

EID: 79959931633     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm2004825     Document Type: Article

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