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Journal of the Electrochemical Society

Volumn 147, Issue 6, 2000, Pages 2340-2342

Contact properties of Pt/RuO2Ru electrode structure integrated on polycrystalline silicon

(3) Choi, Eun Suck a Hwang, Jun Sik a Yoon, Soon Gil a

a Chungnam National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY OF SOLIDS; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PERMITTIVITY; PLATINUM; POLYCRYSTALLINE MATERIALS; RUTHENIUM ALLOYS; SILICON; SURFACES;

CONTACT PROPERTY; CONTACT RESISTANCE; PLATINUM BOTTOM ELECTRODE; POLYCRYSTALLINE SILICON; POLYSILICON STRUCTURE;

ELECTROCHEMICAL ELECTRODES;

EID: 0034205712 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1393532 Document Type: Article

Times cited : (13)

References (9)

1
- 0028513714
- S. G. Yoon, J. C. Lee, and A. Safari, J. Appl. Phys., 76, 2999 (1994).
- (1994) J. Appl. Phys. , vol.76 , pp. 2999
- Yoon, S.G.¹ Lee, J.C.² Safari, A.³

2
- 0029219227
- S. G. Yoon and A. Safari, Thin Solid Films, 254, 211 (1995).
- (1995) Thin Solid Films , vol.254 , pp. 211
- Yoon, S.G.¹ Safari, A.²

3
- 0001057596
- W. J. Lee, S. G. Yoon, and H. G. Kim, J. Appl. Phys., 80, 5891 (1996).
- (1996) J. Appl. Phys. , vol.80 , pp. 5891
- Lee, W.J.¹ Yoon, S.G.² Kim, H.G.³

4
- 0029491604
- S. Yamamichi, P-Y. Lesaicherre, H. Yamaguchi, K. Takemura, S. Sone, H. Yabuta, K. Sato, T. Tamura, K. Nakajima, S. Ohnishi, K. Tokashiki, Y. Hayashi, Y. Kato, Y. Miyasaka, M. Yoshida, and H. Ono, Tech. Dig. Int. Electron Devices Meet., 119 (1995).
- (1995) Tech. Dig. Int. Electron Devices Meet. , pp. 119
- Yamamichi, S.¹ Lesaicherre, P.-Y.² Yamaguchi, H.³ Takemura, K.⁴ Sone, S.⁵ Yabuta, H.⁶ Sato, K.⁷ Tamura, T.⁸ Nakajima, K.⁹ Ohnishi, S.¹⁰ Tokashiki, K.¹¹ Hayashi, Y.¹² Kato, Y.¹³ Miyasaka, Y.¹⁴ Yoshida, M.¹⁵ Ono, H.¹⁶

5
- 18544401526
- A. Yuuki, M. Yamamuka, T. Makita, T. Horikawa, T. Shibano, N. Hirano, H. Maeda, N. Mikami, K. Ono, H. Ogata, and H. Abe, Tech. Dig. Int. Electron Devices Meet., 115 (1995).
- (1995) Tech. Dig. Int. Electron Devices Meet. , pp. 115
- Yuuki, A.¹ Yamamuka, M.² Makita, T.³ Horikawa, T.⁴ Shibano, T.⁵ Hirano, N.⁶ Maeda, H.⁷ Mikami, N.⁸ Ono, K.⁹ Ogata, H.¹⁰ Abe, H.¹¹

6
- 78649500329
- P. Y. Lesaicherre, H. Yamaguchi, Y. Miyasaka, H. Watanabe, H. Ono, and M. Yoshida, Integr. Ferroelectrics, 8, 201 (1995).
- (1995) Integr. Ferroelectrics , vol.8 , pp. 201
- Lesaicherre, P.Y.¹ Yamaguchi, H.² Miyasaka, Y.³ Watanabe, H.⁴ Ono, H.⁵ Yoshida, M.⁶

7
- 0003427458
- Addison-Wesley Pub. Co., Reading, MA
- B. D. Cullity, Elements of X-Ray Diffraction, 2nd ed., Addison-Wesley Pub. Co., Reading, MA (1977).
- (1977) Elements of X-ray Diffraction, 2nd Ed.
- Cullity, B.D.¹

8
- 0003849640
- Wiley, New York
- A. Taylor, X-Ray Metallography, Wiley, New York (1961).
- (1961) X-ray Metallography
- Taylor, A.¹

9
- 0004071496
- John Wiley & Sons, Inc. New York
- D. K. Schroder, Semiconductor Material and Device Characterization, p. 114, John Wiley & Sons, Inc. New York (1990).
- (1990) Semiconductor Material and Device Characterization , pp. 114
- Schroder, D.K.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.