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Volumn 27, Issue 3, 2002, Pages 212-216

Issues in high-κ gate stack interfaces

Author keywords

Gate stacks; High dielectric constant materials; High dielectrics; Interface reactions; Metal gates

Indexed keywords

BONDING; COMPOSITION; DIELECTRIC MATERIALS; ELECTRIC INSULATORS; ELECTRONIC STRUCTURE; FILM GROWTH; GATES (TRANSISTOR); PERMITTIVITY; REACTION KINETICS; SILICON; THERMODYNAMIC PROPERTIES;

EID: 0036501118     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs2002.73     Document Type: Article
Times cited : (88)

References (12)
  • 12
    • 85037012594 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors Home Page; (accessed January)
    • (2002)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.