-
1
-
-
10044271096
-
-
0003-6951,. 10.1063/1.1812832
-
S. K. Kim, W. -D. Kim, K. -M. Kim, C. S. Hwang, and J. Jeong, Appl. Phys. Lett. 0003-6951, 85, 4112 (2004). 10.1063/1.1812832
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 4112
-
-
Kim, S.K.1
Kim, W.-D.2
Kim, K.-M.3
Hwang, C.S.4
Jeong, J.5
-
2
-
-
0142121744
-
-
0003-6951,. 10.1063/1.1610256
-
M. W. Lane, C. E. Murray, F. R. McFeely, P. M. Vereecken, and R. Rosenberg, Appl. Phys. Lett. 0003-6951, 83, 2330 (2003). 10.1063/1.1610256
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 2330
-
-
Lane, M.W.1
Murray, C.E.2
McFeely, F.R.3
Vereecken, P.M.4
Rosenberg, R.5
-
3
-
-
25644446728
-
2 dielectrics with Ru metal gate electrodes
-
DOI 10.1149/1.1992467
-
Y. -S. Suh, H. Lazar, B. Chen, J. -H. Lee, and V. Misraa, J. Electrochem. Soc. 0013-4651, 152, F138 (2005). 10.1149/1.1992467 (Pubitemid 41381292)
-
(2005)
Journal of the Electrochemical Society
, vol.152
, Issue.9
-
-
Suh, Y.-S.1
Lazar, H.2
Chen, B.3
Lee, J.-H.4
Misra, V.5
-
4
-
-
59249104425
-
-
0040-6090,. 10.1016/j.tsf.2008.09.007
-
H. Kim, H. -B.-R. Lee, and W. -J. Maeng, Thin Solid Films 0040-6090, 517, 2563 (2009). 10.1016/j.tsf.2008.09.007
-
(2009)
Thin Solid Films
, vol.517
, pp. 2563
-
-
Kim, H.1
Lee, H.-B.-R.2
Maeng, W.-J.3
-
5
-
-
33748280650
-
Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
-
DOI 10.1063/1.2338793
-
S. -S. Yim, M. -S. Lee, K. -S. Kim, and K. -B. Kim, Appl. Phys. Lett. 0003-6951, 89, 093115 (2006). 10.1063/1.2338793 (Pubitemid 44319988)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.9
, pp. 093115
-
-
Yim, S.-S.1
Lee, M.-S.2
Kim, K.-S.3
Kim, K.-B.4
-
6
-
-
42349086810
-
Formation of Ru nanotubes by atomic layer deposition onto an anodized aluminum oxide template
-
DOI 10.1149/1.2901542
-
D. -J. Lee, S. -S. Yim, K. -S. Kim, S. -H. Kim, and K. -B. Kim, Electrochem. Solid-State Lett. 1099-0062, 11, K61 (2008). 10.1149/1.2901542 (Pubitemid 351555823)
-
(2008)
Electrochemical and Solid-State Letters
, vol.11
, Issue.6
-
-
Lee, D.-J.1
Yim, S.-S.2
Kim, K.-S.3
Kim, S.-H.4
Kim, K.-B.5
-
7
-
-
38049062506
-
-
0957-4484,. 10.1088/0957-4484/19/04/045302
-
W. -H. Kim, S. -J. Park, J. -Y. Son, and H. Kim, Nanotechnology 0957-4484, 19, 045302 (2008). 10.1088/0957-4484/19/04/045302
-
(2008)
Nanotechnology
, vol.19
, pp. 045302
-
-
Kim, W.-H.1
Park, S.-J.2
Son, J.-Y.3
Kim, H.4
-
8
-
-
33947543555
-
Ruthenium/aerogel nanocomposites via atomic layer deposition
-
DOI 10.1088/0957-4484/18/5/055303, PII S0957448407320783
-
J. Biener, T. F. Baumann, Y. Wang, E. J. Nelson, S. O. Kucheyev, A. V. Hamza, M. Kemell, M. Ritala. and M. Leskelä, Nanotechnology 0957-4484, 18, 055303 (2007). 10.1088/0957-4484/18/5/055303 (Pubitemid 46472367)
-
(2007)
Nanotechnology
, vol.18
, Issue.5
, pp. 055303
-
-
Biener, J.1
Baumann, T.F.2
Wang, Y.3
Nelson, E.J.4
Kucheyev, S.O.5
Hamza, A.V.6
Kemell, M.7
Ritala, M.8
Leskela, M.9
-
9
-
-
0037943019
-
-
0948-1907,. 10.1002/cvde.200290007
-
T. Aaltonen, P. Aln, M. Ritala, and M. Leskelä, Chem. Vap. Deposition 0948-1907, 9, 45 (2003). 10.1002/cvde.200290007
-
(2003)
Chem. Vap. Deposition
, vol.9
, pp. 45
-
-
Aaltonen, T.1
Aln, P.2
Ritala, M.3
Leskelä, M.4
-
10
-
-
0041916147
-
-
1099-0062,. 10.1149/1.1595312
-
T. Aaltonen, A. Rahtu, M. Ritala, and M. Leskelä, Electrochem. Solid-State Lett. 1099-0062, 6, C130 (2003). 10.1149/1.1595312
-
(2003)
Electrochem. Solid-State Lett.
, vol.6
, pp. 130
-
-
Aaltonen, T.1
Rahtu, A.2
Ritala, M.3
Leskelä, M.4
-
11
-
-
34249871079
-
2 surfaces
-
DOI 10.1021/la061898u
-
K. J. Park, D. B. Terry, M. Stewart, and G. N. Parsons, Langmuir 0743-7463, 23, 6106 (2007). 10.1021/la061898u (Pubitemid 46868680)
-
(2007)
Langmuir
, vol.23
, Issue.11
, pp. 6106-6112
-
-
Park, K.J.1
Terry, D.B.2
Stewart, S.M.3
Parsons, G.N.4
-
12
-
-
49349096167
-
-
0040-6090,. 10.1016/j.tsf.2008.02.011
-
S. -J. Park, W. -H. Kim, W. -J. Maeng, Y. S. Yang, C. G. Park, H. Kim, K. -N. Lee, S. -W. Jung, and W. K. Seong, Thin Solid Films 0040-6090, 516, 7345 (2008). 10.1016/j.tsf.2008.02.011
-
(2008)
Thin Solid Films
, vol.516
, pp. 7345
-
-
Park, S.-J.1
Kim, W.-H.2
Maeng, W.-J.3
Yang, Y.S.4
Park, C.G.5
Kim, H.6
Lee, K.-N.7
Jung, S.-W.8
Seong, W.K.9
-
13
-
-
1242287585
-
-
0013-4651,. 10.1149/1.1640633
-
O. -K. Kwon, J. -H. Kim, H. -S. Park, and S. -W. Kang, J. Electrochem. Soc. 0013-4651, 151, G109 (2004). 10.1149/1.1640633
-
(2004)
J. Electrochem. Soc.
, vol.151
, pp. 109
-
-
Kwon, O.-K.1
Kim, J.-H.2
Park, H.-S.3
Kang, S.-W.4
-
14
-
-
45149129934
-
-
0021-8979,. 10.1063/1.2938052
-
S. -S. Yim, D. -J. Lee, K. -S. Kim, S. -H. Kim, T. -S. Yoon, and K. -B. Kim, J. Appl. Phys. 0021-8979, 103, 113509 (2008). 10.1063/1.2938052
-
(2008)
J. Appl. Phys.
, vol.103
, pp. 113509
-
-
Yim, S.-S.1
Lee, D.-J.2
Kim, K.-S.3
Kim, S.-H.4
Yoon, T.-S.5
Kim, K.-B.6
-
15
-
-
36148994309
-
Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
-
DOI 10.1016/j.mee.2007.01.239, PII S0167931707003061, Advanced Gate Stack Technology (ISAGST)
-
S. -J. Park, W. -H. Kim, H. -B.-R. Lee, W. J. Maeng, and H. Kim, Microelectron. Eng. 0167-9317, 85, 39 (2008). 10.1016/j.mee.2007.01.239 (Pubitemid 350116997)
-
(2008)
Microelectronic Engineering
, vol.85
, Issue.1
, pp. 39-44
-
-
Park, S.-J.1
Kim, W.-H.2
Lee, H.-B.-R.3
Maeng, W.J.4
Kim, H.5
-
16
-
-
3142538692
-
-
0948-1907,. 10.1002/cvde.200306288
-
T. Aaltonen, P. Aln, M. Ritala, and M. Leskelä, Chem. Vap. Deposition 0948-1907, 10, 215 (2004). 10.1002/cvde.200306288
-
(2004)
Chem. Vap. Deposition
, vol.10
, pp. 215
-
-
Aaltonen, T.1
Aln, P.2
Ritala, M.3
Leskelä, M.4
-
17
-
-
10844260791
-
PEALD of a ruthenium adhesion layer for copper interconnects
-
DOI 10.1149/1.1809576
-
O. -K. Kwon, S. -H. Kwon, H. -S. Park, and S. -W. Kang, J. Electrochem. Soc. 0013-4651, 151, C753 (2004). 10.1149/1.1809576 (Pubitemid 40006144)
-
(2004)
Journal of the Electrochemical Society
, vol.151
, Issue.12
-
-
Kwon, O.-K.1
Kwon, S.-H.2
Park, H.-S.3
Kang, S.-W.4
-
18
-
-
33748032743
-
Nanometer-thick conformal pore sealing of self-assembled mesoporous silica by plasma-assisted atomic layer deposition
-
DOI 10.1021/ja061097d
-
Y. -B. Jiang, N. Liu, H. Gerung, J. L. Cecchi, and C. Jeffrey Brinker, J. Am. Chem. Soc. 0002-7863, 128, 11018 (2006). 10.1021/ja061097d (Pubitemid 44300099)
-
(2006)
Journal of the American Chemical Society
, vol.128
, Issue.34
, pp. 11018-11019
-
-
Jiang, Y.-B.1
Liu, N.2
Gerung, H.3
Cecchi, J.L.4
Brinker, C.J.5
-
19
-
-
33846200857
-
Atomic layer deposition of Ru thin films using 2,4-(dimethylpentadienyl) (ethylcyclopentadienyl)Ru by a liquid injection system
-
DOI 10.1149/1.2403081
-
S. -K. Kim, S. Y. Lee, S. W. Lee, G. W. Hwang, C. S. Hwang, J. W. Lee, and J. Jeong, J. Electrochem. Soc. 0013-4651, 154, D95 (2007). 10.1149/1.2403081 (Pubitemid 46094513)
-
(2007)
Journal of the Electrochemical Society
, vol.154
, Issue.2
-
-
Kim, S.K.1
Lee, S.Y.2
Lee, S.W.3
Hwang, G.W.4
Hwang, C.S.5
Lee, J.W.6
Jeong, J.7
-
20
-
-
0141610893
-
-
0948-1907,. 10.1002/cvde.200390005
-
R. G. Gordon, D. Hausmann, E. Kim, and H. Shepard, Chem. Vap. Deposition 0948-1907, 9, 73 (2003). 10.1002/cvde.200390005
-
(2003)
Chem. Vap. Deposition
, vol.9
, pp. 73
-
-
Gordon, R.G.1
Hausmann, D.2
Kim, E.3
Shepard, H.4
-
21
-
-
0020748299
-
-
0013-4651,. 10.1149/1.2119919
-
I. Suni, D. Sigurd, K. T. Ho, and M. -A. Nicolet, J. Electrochem. Soc. 0013-4651, 130, 1210 (1983). 10.1149/1.2119919
-
(1983)
J. Electrochem. Soc.
, vol.130
, pp. 1210
-
-
Suni, I.1
Sigurd, D.2
Ho, K.T.3
Nicolet, M.-A.4
-
22
-
-
36449003873
-
-
0021-8979,. 10.1063/1.349194
-
H. G. Tompkins, J. Appl. Phys. 0021-8979, 70, 3876 (1991). 10.1063/1.349194
-
(1991)
J. Appl. Phys.
, vol.70
, pp. 3876
-
-
Tompkins, H.G.1
-
23
-
-
0000715165
-
-
0003-6951,. 10.1063/1.118247
-
P. C. McIntyre, S. R. Summerfelt, and C. H. Maggiore, Appl. Phys. Lett. 0003-6951, 70, 711 (1997). 10.1063/1.118247
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 711
-
-
McIntyre, P.C.1
Summerfelt, S.R.2
Maggiore, C.H.3
|