Effect of precursor concentration in atomic layer deposition of Al 2O3

Journal of Applied Physics

Volumn 94, Issue 10, 2003, Pages 6411-6416

  Kuse, Ronald ^a   Kundu, Manisha ^b   Yasuda, Tetsuji ^b   Miyata, Noriyuki ^b   Toriumi, Akira ^b,c  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); ELECTRIC POTENTIAL; FILM GROWTH; INTERFACES (MATERIALS); PARTIAL PRESSURE; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); FLATBAND VOLTAGE; SURFACE SITES;

ALUMINUM COMPOUNDS;

EID: 0344946299     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1618918     Document Type: Article

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