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Journal of the Electrochemical Society

Volumn 157, Issue 1, 2010, Pages

High temperature atomic layer deposition of ruthenium from N,N -dimethyl-1-ruthenocenylethylamine

(4) Kukli, Kaupo a Ritala, Mikko a Kemell, Marianna a Leskelä, Markku a

a UNIVERSITY OF HELSINKI (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH BREAKDOWN VOLTAGE; HIGH TEMPERATURE; METAL ELECTRODES; METAL-INSULATOR-METAL CAPACITORS; MIM STRUCTURE; POLYCRYSTALLINE; RU FILM; SUBSTRATE TEMPERATURE;

DEPOSITION; ELECTROLYTIC CAPACITORS; HETEROJUNCTION BIPOLAR TRANSISTORS; METAL INSULATOR BOUNDARIES; METALS; MIM DEVICES; RUTHENIUM;

FILM GROWTH;

EID: 72249107552 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3251285 Document Type: Article

Times cited : (31)

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