Multiscale metrology and optimization of ultra-scaled InAs quantum well FETs

IEEE Transactions on Electron Devices

Volumn 58, Issue 7, 2011, Pages 1963-1971

  Kharche, Neerav ^a   Klimeck, Gerhard ^b   Kim, Dae Hyun ^c   Del Alamo, Jess A ^d   Luisier, Mathieu ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b PURDUE UNIVERSITY   (United States)

^c ROCKWELL SCIENTIFIC COMPANY   (United States)

^d MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

High electron mobility transistor (HEMT); InAs; InGaAs; nonequilibrium Greens function (NEGF); nonparabolicity; quantum well field effect transistor (QWFET); tight binding

Indexed keywords

INAS; INGAAS; NON EQUILIBRIUM; NON PARABOLICITY; QUANTUM WELL FIELD-EFFECT TRANSISTORS; TIGHT BINDING;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON MOBILITY; INDIUM ARSENIDE; LEAKAGE CURRENTS; OPTIMIZATION; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79959527098     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2144986     Document Type: Article

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