Two-dimensional tunneling effects on the leakage current of MOSFETs with single dielectric and high-κ gate stacks

IEEE Transactions on Electron Devices

Volumn 55, Issue 6, 2008, Pages 1494-1501

  Luisier, Mathieu ^a   Schenk, Andreas ^b  

^a ETH ZURICH   (Switzerland)

^b Purdue University   (United States)

Author keywords

2 D Schr dinger Poisson solver; Electron diffraction; Gate leakage current; High gate stacks; Silicon on insulator (SOI) MOSFETs

Indexed keywords

ELECTRON TUNNELING; GATE DIELECTRICS; MATHEMATICAL MODELS; PROBABILITY; SCHRODINGER EQUATION; SILICON ON INSULATOR TECHNOLOGY;

GATE LEAKAGE CURRENT; GATE STACKS; TRANSISTOR CHANNEL;

MOSFET DEVICES;

EID: 44949143178     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.922493     Document Type: Article

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