Effect of anharmonicity of the strain energy on band offsets in semiconductor nanostructures

Applied Physics Letters

Volumn 85, Issue 18, 2004, Pages 4193-4195

  Lazarenkova, Olga L ^a   Von Allmen, Paul ^a   Oyafuso, Fabiano ^a   Lee, Seungwon ^a   Klimeck, Gerhard ^a,b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANHARMONICITY; BAND OFFSETS; SEMICONDUCTOR NANOSTRUCTURES; STRAIN ENERGY;

COMPUTER SIMULATION; CRYSTALS; INDIUM COMPOUNDS; LATTICE CONSTANTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS; STRAIN;

NANOSTRUCTURED MATERIALS;

EID: 10044235302     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1814810     Document Type: Article

References (11)

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11. v suggested by S.-H. Wei and A. Zunger, Phys. Rev. B 60, 5404 (1999) shifts the valence band energies up in the compressed InAs/GaAs structures, bringing the simulation closer to the experiment, while the downward shift of the valence band in stretched GaAs/InAs structures leads to the larger deviation from the experiment. For the 3% hydrostatic strain the energy shift is about 0.18 eV.