Threshold voltage calculation in ultrathin-film SOI MOSFETs using the effective potential

IEEE Transactions on Nanotechnology

Volumn 2, Issue 3, 2003, Pages 121-125

  Ramey, Stephen M ^a   Ferry, David K ^a  

^a Arizona State University   (United States)

Author keywords

Monte Carlo methods; MOSFETs; Quantum theory; Semiconductor insulator interfaces; Silicon on insulator (SOI) technology

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); MONTE CARLO METHODS; POISSON EQUATION; QUANTUM THEORY; SILICON; SILICON ON INSULATOR TECHNOLOGY; ULTRATHIN FILMS; VOLTAGE MEASUREMENT;

BURIED OXIDES; QUANTUM CONFINEMENT EFFECTS; SEMICONDUCTOR-INSULATOR INTERFACES; WAVE PACKETS;

MOSFET DEVICES;

EID: 3042742893     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2003.817224     Document Type: Article

References (8)

1. S. Takagi and A. Toriumi, "Quantitative understanding of inversion-layer capacitance in Si MOSFETs," IEEE Trans. Electron Devices, vol. 42, pp. 2125-2130, Dec. 1995.
2. M. J. van Dort, P. H. Woerlee, A. J. Walker, C. A. H. Juffermans, and H. Lifka, "Quantum-mechanical threshold voltage shifts of MOSFETs caused by high levels of channel doping," in IEDM Tech. Dig., 1991, pp. 495-498.
3. Y. Omura, K. Kurihara, Y. Takahashi, T. Ishiyama, Y. Nakajima, and K. Izumi, "50 nm channel nMOSFET/SIMOX with an ultranthin 2 or 6 nm thick silicon layer and their significant features of operations," IEEE Electron Device Lett., vol. 18, pp. 190-193, May 1997.
4. D. K. Ferry, R. Akis, and D. Vasileska, "Quantum effects in MOSFETs: use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices," in IEDM Tech. Dig., 2000, pp. 287-291.
5. S. M. Ramey and D. K. Ferry, "Modeling of quantum effects in ultrasmall FD-SOI MOSFETs with effective potentials and 3D Monte Carlo," Phys. B: Condens. Matter, vol. 314, pp. 350-353, Mar. 2002.
6. D. K. Ferry, S. Ramey, L. Shifren, and R. Akis, "The effective potential in device modeling: The good, the bad and the ugly," presented at the 8th Int. Workshop Computational Electronics (IWCE-8), Urbana, IL, Oct. 2001.
7. D. K. Ferry, "Effective potentials and the onset of quantization in ultra-small MOSFETs," Superlattices Microstructures, vol. 28, no. 5/6, pp. 419-423, 2000.
8. Y. Omura, S. Horiguchi, M. Tabe, and K. Kishi, "Quantum-Mechanical effects on the threshold voltage of ultrathin SOI nMOSFETs," IEEE Electron Device Lett., vol. 14, pp. 569-569, Dec. 1993.