Performance analysis of ultra-scaled InAs HEMTs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Kharche, Neerav ^a   Klimeck, Gerhard ^a   Kim, Dae Hyun ^b,c   Del Alamo, Jesús A ^b   Luisier, Mathieu ^a  

^a Purdue University   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL DEVICE; EFFECTIVE MASS; GATE CONTROL; GATE LEAKAGES; GATE LENGTH; GATE WORK FUNCTION; INAS; INSULATOR THICKNESS; PERFORMANCE ANALYSIS; QUANTUM TRANSPORT SIMULATOR; REAL-SPACE; SCALING BEHAVIOR; SIMULATION METHODOLOGY;

ELECTRON DEVICES; HIGH ELECTRON MOBILITY TRANSISTORS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS;

SEMICONDUCTING INDIUM;

EID: 77952324482     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424315     Document Type: Conference Paper

References (9)

1. D. H. Kim et al., IEDM 2008, p. 719.
2. Chien-I Kuo et al., Elec. Dev. Lett. 29, 290 (2008).
3. D. H. Kim et al., IEDM 2007, p. 629.
4. D. H. Kim et al., Elec. Dev. Lett. 29, 830 (2008).
5. M. K. Hudait et al. IEDM 2007, p. 627.
6. M. Luisier et al., IEEE Trans. on Elec. Dev. 55, 1494, 2008.
7. M. Luisier et al., IEDM 2008, p. 887.
8. M. Lundstrom et al., AIP Conf. Proc. 931, 563 (2007).
9. N Kharche, et al. "OMENFET," http://nanohub.org/contribtool/ omenhfet.