Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics

Springer Series in Advanced Microelectronics

Volumn 27, Issue , 2007, Pages 341-361

  Ye, P D ^a   Wilk, G D ^b   Frank, M M ^c  

^a PURDUE UNIVERSITY   (United States)

^b ASM AMERICA   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Atomic Layer Deposition; Gate Bias; Gate Dielectric; Gate Length; Leakage Current Density

Indexed keywords

EID: 79959474837     PISSN: 14370387     EISSN: 21976643     Source Type: Book Series    
DOI: 10.1007/978-3-540-71491-0_16     Document Type: Chapter

References (62)

1. T. Mimura and M. Fukuta, “Status of the GaAs Metal-Oxide-Semiconductor Technology”, IEEE Trans. Electron Devices, vol. ED-27, pp. 1147–1155, 1980, and references therein
2. “Physics and Chemistry of III–V Compound Semiconductor Interfaces”, Ed. C.W. Wilmsen, Plenum, New York, 1985, and references therein
3. “Semiconductor-insulator interfaces”, M. Hong, C.T. Liu, H. Reese, and J. Kwo in “Encyclopedia of Electrical and Electronics Engineering”, volume 19, pp. 87–100, Ed. J.G. Webster, Published by John Wiley & Sons, New York, 1999, and references therein
4. S. Tiwari, S.L. Wright, and J. Batey, “Unpinned GaAs MOS capacitors and transistors”, IEEE Electron Devices Lett., 9, pp. 488–490, 1988
5. C.L. Chen, F.W. Smith, B.J. Clifton, L.J. Mahoney, M.J. Manfra, and A.R. Calawa, “High-Power-Density GaAs MISFET’s with a low-temperature-grown epitaxial layer as the insulator”, IEEE Electron Devices Lett., 12, pp. 306–308, 1991
6. 5 film”, IEEE Electron Devices Lett., 15, pp. 251–253, 1994
7. 1-xAs-GaAs metal-oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs”, Appl. Phys. Lett., 66, pp. 2688–2690, 1995
8. J.Y. Wu, H.H. Wang, Y.H. Wang, and M.P. Houng, “A GaAs MOSFET with a liquid phase oxidized gate”, IEEE Electron Devices Lett., 20, pp. 18–20, 1999
9. 2 gate insulator layer”, IEEE Electron Devices Lett., 9, pp. 548–549, 1988
10. 1−xAs(x∼1) through the use of AlAs/GaAs digital alloys”, Appl. Phys. Lett., 76, pp. 2544–2546, 2000
11. 0.02As layers due to the presence of low-temperature-grown GaAs”, Appl. Phys. Lett., 77, pp. 205–207, 2000
12. 3 grown by molecular beam reaction”, Surf. Sci., 86, pp. 835–840, 1979
13. 4/Si/Ge/GaAs metal-insulator-semiconductor structures grown by in situ chemical vapor deposition”, J. Appl. Phys., 75, pp.1826–1828, 1994
14. B.J. Skromme, C.J. Sandroff, E. Yablonovitch, and T. Gmitter, Appl. Phys. Lett. 51, 2022 (1987)
15. G.G. Fountain, R.A. Rudder, S.V. Hattangady, R.J. Markunas, and J.A. Hutchby, IEDM Tech, Dig. 887 (1989)
16. M. Akazawa, H. Ishii, and H.Hasegawa, Jpn. J. Appl. Phys., Part 1 30, 3744 (1991)
17. A. Callegari, P.D. Hoh, D.A. Buchanan, and D. Lacey, Appl. Phys. Lett. 54, 332 (1989)
18. S.D. Offsey, J.M. Woodall, A.C. Warren, P.D. Kirchner, T.I. Chappell, and G.D. Pettit, Appl. Phys. Lett. 48, 475 (1986)
19. M.J. Hale, S.I. Yi, J.Z. Sexton, A.C. Kummel, and M. Passlack, J. Chem. Phys. 119, 6719 (2003)
20. W.E. Spicer, Z. Liliental-Weber, E. Weber, N. Newman, T. Kendelewicz, R. Cao, C. McCants, P. Mahowald, K. Miyano, and I. Lindau, J. Vac. Sci. Technol. B 6, 1245 (1988)
21. K. Eguchi and T. Katoda, Jpn. J. Appl. Phys. 24, 1043 (1985)
22. M. Hong, M. Passlack, J.P. Mannaerts, J. Kwo, S.N.G. Chu, N. Moriya, S.Y. Hou, and V.J. Fratello, “Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy”, J. Vac. Sci. Technol. B, 14, pp. 2297–2300, 1996
23. 3-GaAs interfaces: Fabrication, characterization, and modeling”, IEEE Trans. Electron Devices, 44, pp. 214–225, 1997
24. M. Hong, J. Kwo, A.R. Kortan, J.P. Mannaerts, and A.M. Sergent, “Epitax-ial cubic Gadolinium oxide as a dielectric for Gallium Arsenide passivation”, Science, 283, pp. 1897–1900, 1999
25. x, 0 < x < 1.0 films”, Appl. Phys. Lett., 75, pp. 1116–1118, 1999
26. 3) as gate oxide”, Solid-State Electron., 41, pp. 1751–1753, 1997
27. Y.C. Wang, M. Hong, J.M. Kuo, J.P. Mannaerts, J. Kwo, H.S. Tsai, J.J. Krajewski, Y.K. Chen, and A.Y. Cho, “Demonstration of submicron depletion-mode GaAs MOSFET’s with negligible drain current drift and hysteresis”, IEEE Electron Devices Lett., 20, pp. 457–459, 1999
28. M. Passlack, J.K. Abrokwah, R. Droopad, Z. Yu, C. Overgaard, S. I. Yi, M. Hale, J. Sexton, and A.C. Kummel, “Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor”, IEEE Electron Devices Lett., 23, pp. 508–510, 2002
29. P.D. Ye, G.D. Wilk, J. Kwo, B. Yang, H.-J.L. Gossmann, M. Frei, S.N.G. Chu, J.P. Mannaerts, M. Sergent, M. Hong, K. Ng, J. Bude, “GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition”, IEEE Electron Device Lett., 24, No.4, 209 (April 2003)
30. 3 gate dielectrics grown by atomic layer deposition”, J. Electronic Mater., 33, No.8, 912–915 (Aug 2004)
31. P.D. Ye, G.D. Wilk, B. Yang, J. Kwo, S.N.G. Chu, S. Nakahara, H.-J.L. Gossmann, J.P. Mannaerts, M. Hong, K. Ng, J. Bude, “GaAs MOSFET with nm-thin dielectric grown by atomic layer deposition”, Appl. Phys. Lett. 83, 180 (2003)
32. P.D. Ye, G.D. Wilk, B. Yang, S.N.G. Chu, H.-J.L. Gossmann, K. Ng, J. Bude, “Improvement of GaAs MESFET drain breakdown voltage by oxide surface passivation grown by atomic layer deposition”, Solid State Electron., 49, Issue 5, 790–794 (May 2005)
33. P.D. Ye, G.D. Wilk, B. Yang, J. Kwo, H.-J.L. Gossmann, M. Hong, K. Ng, J. Bude, “Depletion-mode InGaAs MOSFET with oxide gate dielectric grown by atomic layer deposition”, Appl. Phys. Lett. 84, January 17 (2004)
34. 3 as gate dielectric”, Appl. Phys. Lett. 86, 063501 (2005).
35. P.D. Ye, G.D. Wilk, E. Tois, and J.J. Wang, “Formation and characterization of nanometer scale metal-oxide-semiconductor structures on GaAs using low-temperature atomic layer deposition”, Appl. Phys. Lett. 87, (July 4, 2005).
36. G.D. Wilk, R.M. Wallace, and J.M. Anthony, “High-k gate dielectrics: Current status and materials properties considerations”, J. Appl. Phys., 89, pp. 5243– 5275, 2001.
37. 3 gate dielectrics on GaAs grown by atomic layer deposition”, Appl. Phys. Lett. 86, 152904 (2005)
38. K. Tone, M. Yamada, Y. Ide, and Y. Katayama, Jpn. J. Appl. Phys., Part 2 31, L721 (1992)
39. F. Schröder, W. Storm, M. Altebockwinkel, L. Wiedmann, and A. Bennighoven, J. Vac. Sci. Technol. B 10, 1291 (1992)
40. S. Adachi and D. Kikuchi, J. Electrochem. Soc. 147, 4618 (2000)
41. A. Delabie, R.L. Puurunen, B. Brijs, M. Caymax, T. Conard, B. Onsia, O. Richard, W. Vandervorst, C. Zhao, M.M. Viitanen, H.H. Brongersma, M. de Ridder, L.V. Goncharova, E. Garfunkel, T. Gustafsson, W. Tsai, M.M. Heyns, and M. Meuris, J. Appl. Phys., submitted
42. D.R. Lide, CRC Handbook of Chemistry and Physics, 85 ed. (CRC Press, Boca Raton, 2004)
43. I. Barin and O. Knacke, Thermochemical Properties of Inorganic Substances. (Springer-Verlag, Berlin, 1973)
44. M.D. Groner, J.W. Elam, F.H. Fabreguette, and S.M. George, Thin Solid Films 413, 186 (2002)
45. W.S. Yang, Y.K. Kim, S.Y. Yang, J.H. Choi, H.S. Park, S.I. Lee, J.B. Yoo, Surf. Coat. Tech. 131, 79 (2000)
46. G.S. Higashi and C.G. Fleming, Appl. Phys. Lett. 55, 1963 (1989)
47. J. Fan, K. Sugioka, K. Toyoda, Jpn. J. Appl. Phys. 30, L1139 (1991)
48. H. Kattelus, M. Ylilammi, J. Saarilahti, J. Antson, S. Lindfors, Thin Solid Films 225, 296 (1993)
49. K. Kukli, M. Ritala, M. Leskela and J. Jokinene, J. Vac. Sci. Technol. A 15, 2214 (1997)
50. P. Ericsson, S. Bengtsson, and J. Skarp, Microelectron. Eng. 36, 91 (1997)
51. V.E. Drozd, A.P. Baraban and I.O. Nikiforova, Appl. Surf. Sci. 82/83, 583 (1994)
52. Zhijiong Luo and T.P. Ma, “A New Method to Extract EOT of Ultrathin Gate Dielectric With High Leakage Current”, IEEE Electron Device Lett., 25, No.9, 655 (2004)
53. M. Asif Khan, X. Hu, G. Sumin, A. Lunev, J. Yang, R. Gaska, and M.S. Shur, IEEE Electron Devices Lett. 21, 63 (2000)
54. M. Asif Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska, and M.S. Shur, Appl. Phys. Lett, 77, 1339 (2000)
55. G. Simon, X. Hu, N. Ilinskaya, A. Kumar, A. Koudymov, J. Zhang, M.A. Khan, R. Gaska, and M.S. Shur, Electronics Lett. 36, 2043 (2000)
56. A. Koudymov, X. Hu, K. Simin, G. Simin, M. Ali, J. Yang, and M. Asif Khan, IEEE Electron Devices Lett., 23, 449 (2002)
57. G. Simin, A. Koudymov, H. Fatima, J. Zhang, J. Yang, and M. Asif Khan, X. Hu, A. Tarakji, R. Gaska, and M.S. Shur, IEEE Electron Devices Lett. 23, 458 (2002)
58. G. Simon, X. Hu, N. Ilinskaya, J. Zhang, A. Tarakji, A. Kumar, J. Yang, M. Asif Khan, R. Gaska, and M.S. Shur, IEEE Electron Devices Lett. 22, 53 (2001)
59. X. Hu, A. Koudymov, G. Simon, J. Yang, M. Asif Khan, A. Tarakji, M.S. Shur, and R. Gaska, Appl. Phys. Lett, 79, 2832 (2000)
60. S. Ootomo, T. Hashizume, and H. Hasegawa, phys. stat. sol. (c) 1, 90 (2002).
61. T. Hashizume, S. Ootomo, and H. Hasegawa, Appl. Phys. Lett. 83, 2952 (2003)
62. R. Mehandru, B. Luo, J. Kim, F. Ren, B.P. Gila, A.H. Onstine, C.R. Abernathy, S.J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via and A. Crespo, Appl. Phys. Lett. 82, 2530 (2003)