Status of the GaAs Metal-Oxide-Semiconductor Technology

IEEE Transactions on Electron Devices

Volumn 27, Issue 6, 1980, Pages 1147-1155

  Mimura, Takashi ^a   Fukuta, Masumi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

SEMICONDUCTOR DEVICES, MOS;

EID: 0019023053     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1980.19998     Document Type: Article

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