Improvement of the interface quality during thermal oxidation of Al0.98Ga0.02As layers due to the presence of low-temperature-grown GaAs

Applied Physics Letters

Volumn 77, Issue 2, 2000, Pages 205-207

  Ferrer, J C ^a   Liliental Weber, Z ^a   Reese, H ^b   Chiu, Y J ^b   Hu, E ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009809726     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126925     Document Type: Article

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