GaAs-based metal-oxide semiconductor field-effect transistors with Al 2O3 gate dielectrics grown by atomic layer deposition

Journal of Electronic Materials

Volumn 33, Issue 8, 2004, Pages 912-915

  Ye, P D ^a   Wilk, G D ^a,b   Yang, B ^a   Kwo, J ^a   Gossmann, H J L ^a,c   Frei, M ^a   Mannaerts, J P ^a   Sergent, M ^a   Hong, M ^a   Ng, K K ^a   Bude, J ^a  

^a AGERE SYSTEMS   (United States)

^b ASM AMERICA   (United States)

^c AXCELIS TECHNOLOGIES   (United States)

Author keywords

Atomic layer deposition (ALD); Depletion mode; GaAs metal oxide semiconductor field effect transistor (MOSFET)

Indexed keywords

DISPERSIONS; ELECTRIC PROPERTIES; HYSTERESIS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MICROWAVES; OSCILLATIONS; TRANSCONDUCTANCE;

ATOMIC LAYER DEPOSITION (ALD); DIELECTRIC BREAKDOWN; GATE DIELECTRICS; TRAP DENSITY;

MOSFET DEVICES;

EID: 4043075481     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0220-9     Document Type: Article

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