Hydrothermally grown ZnO buffer layer for the growth of highly (4 wt%) ga-doped ZnO epitaxial thin films on MgAl2O4 (1 1 1) substrates

Journal of Crystal Growth

Volumn 322, Issue 1, 2011, Pages 45-50

  Shin, Seung Wook ^a   Kwon, Ye Bin ^b   Moholkar, A V ^c   Heo, Gi Seok ^d   Jung, In Ok ^b   Moon, Jong Ha ^a   Kim, Jin Hyeok ^b   Lee, Jeong Yong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Chonnam National University   (South Korea)

^c Gopal Krishna Gokhale College   (India)

^d Korea Institute of Industrial Technology   (South Korea)

Author keywords

A1. X ray diffraction; A2. Hydrothermal crystal growth; A2. Single crystal growth; B1. Oxide; B2. Semiconducting IIV materials

Indexed keywords

A2. SINGLE CRYSTAL GROWTH; AMMONIUM HYDROXIDE; AMMONIUM NITRATE; AQUEOUS SOLUTIONS; B1. OXIDE; BUFFERED SUBSTRATES; CRYSTALLINITIES; DEEP-LEVEL EMISSION PEAKS; DOPED ZNO; ELECTRICAL RESISTIVITY; EPITAXIAL THIN FILMS; GA-DOPED ZNO; HEXAGONAL WURTZITE; HYDROTHERMAL CRYSTAL GROWTH; HYDROTHERMAL TECHNIQUES; HYDROTHERMALLY; NEAR BAND EDGE EMISSIONS; OPTICAL AND ELECTRICAL PROPERTIES; ORIENTATION RELATIONSHIP; POLYCRYSTALLINE; RF MAGNETRON SPUTTERING TECHNIQUE; ROOM TEMPERATURE PHOTOLUMINESCENCE SPECTRA; SEMICONDUCTING II-V MATERIALS; ZINC NITRATES; ZNO; ZNO BUFFER LAYER;

AMMONIUM COMPOUNDS; AMORPHOUS MATERIALS; BUFFER LAYERS; CRYSTALLIZATION; DIFFRACTION; ELECTRIC CONDUCTIVITY; EPITAXIAL FILMS; EPITAXIAL GROWTH; MAGNETRON SPUTTERING; PHOTOLUMINESCENCE; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAYS; ZINC OXIDE; ZINC SULFIDE;

SUBSTRATES;

EID: 79954583364     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.03.011     Document Type: Article

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