Effect of a ZnO buffer layer on the properties of Ga-doped ZnO thin films grown on Al2O3 (0 0 0 1) substrates at a low growth temperature of 250 °C

Journal of Crystal Growth

Volumn 312, Issue 9, 2010, Pages 1551-1556

  Wook Shin, Seung ^a   Ung Sim, Kyu ^b   Pawar, S M ^b   Moholkar, A V ^b,d   Ok Jung, In ^b   Ho Yun, Jae ^c   Moon, Jong Ha ^b   Hyeok Kim, Jin ^b   Yong Lee, Jeong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Chonnam National University   (South Korea)

^c Korea Institute of Energy Research (KIER)   (South Korea)

^d Gopal Krishna Gokhale College   (India)

Author keywords

A1. Epitaxial growth; A1. RF magnetron sputtering technique; A1. Transparent conducting oxide films (TCO); A2. Single crystal growth; B3. Solar cells

Indexed keywords

A1. TRANSPARENT CONDUCTING OXIDE FILMS (TCO); B3. SOLAR CELLS; B3.SOLAR CELL; RF MAGNETRON SPUTTERING TECHNIQUE; TRANSPARENT CONDUCTING OXIDE FILMS;

BUFFER LAYERS; CONDUCTIVE FILMS; CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; FILM GROWTH; GALLIUM; GRAIN BOUNDARIES; GROWTH TEMPERATURE; MAGNETRON SPUTTERING; MAGNETRONS; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SOLAR CELLS; SUBSTRATES; THIN FILM DEVICES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

OXIDE FILMS;

EID: 77950298440     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.02.013     Document Type: Article

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