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Volumn 41, Issue 3, 2009, Pages 479-482
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Effects of SiC buffer on the structural and photoelectrical properties of ZnO thin films grown on Si(1 1 1) by PLD
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Author keywords
Photoelectrical property; Si(1 1 1) substrate; SiC buffer; ZnO films
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Indexed keywords
CRYSTALLINE MATERIALS;
LATTICE MISMATCH;
LIGHT;
LIGHT EMISSION;
LUMINESCENCE;
METALLIC FILMS;
OPTICAL FILMS;
PROGRAMMABLE LOGIC CONTROLLERS;
PULSED LASER APPLICATIONS;
SEMICONDUCTING ZINC COMPOUNDS;
SILICON;
SILICON CARBIDE;
SOLIDS;
SUBSTRATES;
THIN FILM DEVICES;
THIN FILMS;
X RAY ANALYSIS;
ZINC OXIDE;
CRYSTALLINE QUALITIES;
INTERFACE DEFECTS;
INTERFACE STATES;
OPTICAL-;
PHOTO RESPONSES;
PHOTOELECTRICAL PROPERTY;
PHOTORESPONSE MEASUREMENTS;
SI SUBSTRATES;
SI(1 1 1) SUBSTRATE;
SIC BUFFER;
SIC BUFFER LAYERS;
STRESS INDUCED;
THERMAL MISMATCHES;
ULTRA VIOLETS;
UV DETECTORS;
X-RAY DIFFRACTIONS;
ZNO FILMS;
ZNO THIN FILMS;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 58149089510
PISSN: 13869477
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physe.2008.09.021 Document Type: Article |
Times cited : (14)
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References (20)
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