Improvement of the crystalline quality of the ZnO epitaxial layer on a low-temperature grown ZnO buffer layer

Journal of Crystal Growth

Volumn 266, Issue 4, 2004, Pages 505-510

  Yan, J F ^a,b   Lu, Y M ^a   Liu, Y C ^a,b   Liang, H W ^a   Li, B H ^a   Shen, D Z ^a   Zhang, J Y ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b NORTHEAST NORMAL UNIVERSITY   (China)

Author keywords

A1. Atomic force microscopy; A1. Photoluminescence; A1. X ray diffraction; A3. Plasma assisted molecular beam epitaxy; B1. ZnO; B2. Semiconducting II VI materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; LOW TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

BAND EMISSIONS; BUFFER LAYERS; OXIDE LAYERS; ULTRAVIOLET EMISSIONS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 2442622456     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.02.111     Document Type: Article

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