Effects of growth atmosphere and homo-buffer layer on properties of ZnO films prepared on Si(1 1 1) by PLD

Vacuum

Volumn 82, Issue 6, 2008, Pages 664-667

  Zhao, Jie ^a,b   Hu, Lizhong ^b   Wang, Weiwei ^a   Liu, Weifeng ^b   Gong, Ailing ^a  

^a KUNMING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b State Key Laboratory for Materials Modification by Laser   (China)

Author keywords

Buffer layer; Oxygen atmosphere; Photoluminescence; Reflection high energy electron diffraction; ZnO

Indexed keywords

OXIDE FILMS; PULSED LASER DEPOSITION; X RAY DIFFRACTION; ZINC OXIDE;

GROWTH ATMOSPHERE; POLYCRYSTALLINE FILM;

BUFFER LAYERS;

EID: 38849093229     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2007.10.007     Document Type: Article

References (21)

1. Bagnall D.M., Chen Y.F., Zhu Z., Yao T., Koyama S., Shen M.Y., et al. Appl Phys Lett 70 (1997) 2230
2. Tang Z.K., Wong G.K.L., Yu P., Kawasaki M., Ohtomo A., Koinuma H., et al. Appl Phys Lett 72 (1998) 3270
3. Look D.C. Mater Sci Eng B 80 (2001) 383
4. Chen Y., Bagnall D.M., Koh H., Park K., Hiraga K., and Zhu Z. J Appl Phys 84 (1998) 3912
5. Sato D., Kashiwaba Y., Haga K., Watanabe H., Zhang B.P., and Segawa Y. Vacuum 74 (2004) 601
6. Sakaguchi I., Ryoken H., Hishita S., and Haneda H. Thin Solid Films 506/507 (2006) 184
7. Iwata K., Fons P., Niki S., Yamada A., Matsubara K., Nakahara K., et al. J Cryst Growth 214/215 (2000) 50
8. Miyake A., Kominami H., Tatsuoka H., Kuwabara H., Nakanishi Y., and Hatanaka Y. J Cryst Growth 214/215 (2000) 294
9. Nahhas A., Kim H.K., and Blachere J. Appl Phys Lett 78 (2001) 1511
10. Koike K., Komuro T., Ogata K., Sasa S., Inoue M., and Yano M. Physica E 21 (2004) 679
11. Yan J.F., Lu Y.M., Liu Y.C., Liang H.W., Li B.H., Shen D.S., et al. J Cryst Growth 266 (2004) 505
12. Zhao J., Hu L.Z., Wang Z.Y., Wang Z.J., Zhang H.Q., Zhao Y., et al. J Cryst Growth 280 (2005) 455
13. Xiu F., Yang Z., Zhao D., Liu J., Alim K.A., Balandin A.A., et al. J Cryst Growth 286 (2006) 61
14. Zhao J., Hu L.Z., Wang Z.Y., Chen J.M., Zhao J.Z., Fan Z.B., et al. Vacuum 81 (2007) 1035
15. Vanheusden K., Seager C.H., Warren W.L., Tallant D.R., and Voigt J.A. Appl Phys Lett 68 (1996) 403
16. Kohan A.F., Ceder G., Morgan D., and Walle C.G.V. Phys Rev B 61 (2000) 15019
17. Wang Q.P., Zhang D.H., Xue Z.Y., and Zhang X.J. Opt Mater 26 (2004) 23
18. Fan X.M., Lian J.S., Guo Z.X., and Lu H.J. Appl Surf Sci 239 (2005) 176
19. Børseth T.M., Svensson B.G., Kuznetsov A.Y., Klason P., Zhao Q.X., and Willander M. Appl Phys Lett 89 (2006) 262112
20. Look D.C., and Claflin B. Phys Status Solidi b 241 (2004) 624
21. Liu C.Y., Zhang B.P., Binh N.T., Wakatsuki K., and Segawa Y. J Crystal Growth 290 (2006) 314