Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer

Applied Physics Letters

Volumn 78, Issue 11, 2001, Pages 1511-1513

  Nahhas, Ahmed ^a   Kim, Hong Koo ^a   Blachere, Jean ^a  

^a PA 15213   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035848117     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1355296     Document Type: Article

References (19)

1. M. A. I., Johnson, S. Fujita, W. H. Rowland, W. C. Hughes, J. W. Cook, and J. F. Schetzina, J. Electron. Mater. 25, 855 (1996).
2. Y. F. Chen, D. M. Bagnall, Z. Zhu, T. Sekiuchi, K. Park, K. Hiraga, T. Yao, S. Koyama, M. Y. Shen, and T. Goto, J. Cryst. Growth 181, 165 (1997).
3. A. Ohtomo, K. Tamura, K. Saikusa, K. Takahashi, T. Makino, Y. Segawa, H. Koinuma, and M. Kawasaki, Appl. Phys. Lett. 75, 2635 (1999).
4. R. D. Vispute, V. Talyansky, S. Choopun, R. P. Sharma, T. Venkatesan, M. He, X. Tang, J. B. Halpern, M. G. Spencer, Y. X. Li, L. G. Salamanca-Riba, A. A. Iliadis, and K. A. Jones, Appl. Phys. Lett. 73, 348 (1998).
5. See, for example, T. Shirasawa, T. Honda, F. Koyama, and K. Iga, Mater. Res. Soc. Symp. Proc. 449, 373 (1997).
6. D. R. Lide, CRC Handbook of Chemistry and Physics, 74th ed. (Chemical Rubber, Boca Raton, FL, 1994), p. 5-4.
7. It should be noted here that the feasibility of epitaxial growth usually depends not only on the thermodynamic properties but also on the kinetic issues involved and other process details. In the magnetron sputtering case, for example, the plasma is highly confined to the sputter source side, i.e., near the target surface. The active nitrogen species are then generated and distribute mostly near the target surface (a Ga target is used in this work). This nonuniform distribution of active nitrogen would enhance production of GaN sputtered particle fluxes but not formation of SiN on the substrate side.
8. N. J. Watkins, G. W. Wicks, and Y. Gao, Appl. Phys. Lett. 75, 2602 (1999).
9. T. Lei, M. Fanciulli, R. J. Molnar, T. D. Moustakas, R. J. Graham, and J. Scanlon, Appl. Phys. Lett. 59, 944 (1991).
10. G. A. Martin, B. N. Sverdlov, A. Botchkarev, H. Morkoc, D. J. Smith, S.-C. Y. Chen, W. H. Thompson, and M. H. Nayfeh, Mater. Res. Soc. Symp. Proc. 395, 67 (1996).
11. See, for example, R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K. A. Jones, A. A. Iliadis, M. Asif Khan, and J. W. Yang, Appl. Phys. Lett. 71, 102 (1997).
12. K. S. Stevens, A. Ohtani, A. F. Schwartzman, and R. Beresford, J. Vac. Sci. Technol. B 12, 1186 (1994).
13. W. J. Meng and J. Heremans, J. Vac. Sci. Technol. A 10, 1610 (1992).
14. D. Wang, Y. Hiroyama, M. Tamura, M. Ichikawa, and S. Yoshida, Appl. Phys. Lett. 77, 1846 (2000).
15. C. A. Tran, A. Osinski, R. F. Karlicek, and I. Berishev, Appl. Phys. Lett. 75, 1494 (1999).
16. S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992).
17. J. Ross and M. Rubin, Mater. Lett. 12, 215 (1991); E. Kim, B. Lee, A. Nahhas, and H. K. Kim, Appl. Phys. Lett. 77, 1747 (2000).
18. J. Ross and M. Rubin, Mater. Lett. 12, 215 (1991); E. Kim, B. Lee, A. Nahhas, and H. K. Kim, Appl. Phys. Lett. 77, 1747 (2000).
19. W. J. Meng and T. A. Perry, J. Appl. Phys. 76, 7824 (1994).