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Volumn 78, Issue 11, 2001, Pages 1511-1513

Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer

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[No Author keywords available]

Indexed keywords


EID: 0035848117     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1355296     Document Type: Article
Times cited : (159)

References (19)
  • 7
    • 0041828164 scopus 로고    scopus 로고
    • note
    • It should be noted here that the feasibility of epitaxial growth usually depends not only on the thermodynamic properties but also on the kinetic issues involved and other process details. In the magnetron sputtering case, for example, the plasma is highly confined to the sputter source side, i.e., near the target surface. The active nitrogen species are then generated and distribute mostly near the target surface (a Ga target is used in this work). This nonuniform distribution of active nitrogen would enhance production of GaN sputtered particle fluxes but not formation of SiN on the substrate side.
  • 17
    • 0026255726 scopus 로고
    • J. Ross and M. Rubin, Mater. Lett. 12, 215 (1991); E. Kim, B. Lee, A. Nahhas, and H. K. Kim, Appl. Phys. Lett. 77, 1747 (2000).
    • (1991) Mater. Lett. , vol.12 , pp. 215
    • Ross, J.1    Rubin, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.