|
Volumn 42, Issue 13, 2007, Pages 4845-4849
|
Dependence of the resistivity and the transmittance of sputter-deposited Ga-doped ZnO films on oxygen partial pressure and sputtering temperature
|
Author keywords
[No Author keywords available]
|
Indexed keywords
DOPING (ADDITIVES);
GALLIUM COMPOUNDS;
GRAIN BOUNDARIES;
PARTIAL PRESSURE;
SPUTTER DEPOSITION;
THIN FILMS;
MINIMUM RESISTIVITY;
OXYGEN VACANCY CONCENTRATION;
SUBSTRATE TEMPERATURE;
ZINC OXIDE;
|
EID: 34547327568
PISSN: 00222461
EISSN: 15734803
Source Type: Journal
DOI: 10.1007/s10853-006-0738-8 Document Type: Article |
Times cited : (55)
|
References (11)
|