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Volumn 10, Issue SUPPL. 3, 2010, Pages

Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system

Author keywords

Dopant doped ZnO; Photoluminescence; RF magnetron sputtering; Transparent conducting oxide (TCO)

Indexed keywords

AFM IMAGE; BAND GAP ENERGY; COLUMNAR STRUCTURES; CONCENTRATION OF; DOPANT DOPED ZNO; DOPED SAMPLE; DOPED ZNO; DOPING ELEMENTS; ELECTRICAL PROPERTY; GLASS SUBSTRATES; HEXAGONAL WURTZITE; OUT-OF-PLANE ORIENTATION; PL SPECTRA; POLYCRYSTALLINE; RF-MAGNETRON SPUTTERING; SEM MICROGRAPHS; SURFACE SMOOTHNESS; TRANSPARENT CONDUCTING OXIDE; UV-VIS SPECTROMETER; VIOLET EMISSION; VISIBLE REGION; XRD STUDIES; ZINC VACANCY; ZNO THIN FILM;

EID: 77955517504     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2010.02.028     Document Type: Conference Paper
Times cited : (87)

References (26)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.