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Volumn 10, Issue SUPPL. 3, 2010, Pages
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Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system
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Author keywords
Dopant doped ZnO; Photoluminescence; RF magnetron sputtering; Transparent conducting oxide (TCO)
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Indexed keywords
AFM IMAGE;
BAND GAP ENERGY;
COLUMNAR STRUCTURES;
CONCENTRATION OF;
DOPANT DOPED ZNO;
DOPED SAMPLE;
DOPED ZNO;
DOPING ELEMENTS;
ELECTRICAL PROPERTY;
GLASS SUBSTRATES;
HEXAGONAL WURTZITE;
OUT-OF-PLANE ORIENTATION;
PL SPECTRA;
POLYCRYSTALLINE;
RF-MAGNETRON SPUTTERING;
SEM MICROGRAPHS;
SURFACE SMOOTHNESS;
TRANSPARENT CONDUCTING OXIDE;
UV-VIS SPECTROMETER;
VIOLET EMISSION;
VISIBLE REGION;
XRD STUDIES;
ZINC VACANCY;
ZNO THIN FILM;
CARRIER CONCENTRATION;
CARRIER MOBILITY;
DOPING (ADDITIVES);
ELECTRIC PROPERTIES;
GALLIUM;
GALLIUM ALLOYS;
MAGNETRON SPUTTERING;
METALLIC FILMS;
OPTICAL FILMS;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
SUBSTRATES;
THIN FILMS;
VAPOR DEPOSITION;
ZINC;
ZINC OXIDE;
ZINC SULFIDE;
FILM PREPARATION;
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EID: 77955517504
PISSN: 15671739
EISSN: None
Source Type: Journal
DOI: 10.1016/j.cap.2010.02.028 Document Type: Conference Paper |
Times cited : (87)
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References (26)
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