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Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 538-543

Growth and characterization of Ga-doped ZnO layers on a-plane sapphire substrates grown by molecular beam epitaxy

(4) Kato, Hiroyuki a Sano, Michihiro a Miyamoto, Kazuhiro a Yao, Takafumi b

a STANLEY ELECTRIC CO LTD (Japan)

b TOHOKU UNIVERSITY (Japan)

Author keywords

A1. Doping; A1. Photoluminescence; A1. Rutherford backscattering spectrometry; A3. Molecular beam epitaxy; B1. Zinc compounds

Indexed keywords

HALL EFFECT; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SPECTROMETRY; SUBSTRATES; X RAY DIFFRACTION; ZINC OXIDE;

CRYSTALLINE QUALITY;

MOLECULAR BEAM EPITAXY;

EID: 0036531095 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01972-8 Document Type: Article

Times cited : (166)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.