Photoluminescence of Ga-doped ZnO film grown on c-Al2 O3 (0001) by plasma-assisted molecular beam epitaxy

Journal of Applied Physics

Volumn 102, Issue 7, 2007, Pages

  Park, H C ^a   Byun, D ^a   Angadi, B ^b,d   Hee Park, D ^b   Choi, W K ^b   Choi, J W ^b   Jung, Y S ^c  

^a Korea University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c USA   (United States)

^d BANGALORE UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; GALLIUM; METALLIC FILMS; MOLECULAR BEAM EPITAXY; STARK EFFECT; ZINC OXIDE;

LOCALIZATION ENERGY; MOTT CRITICAL DENSITY; PEAK INTENSITY; PLASMA-ASSISTED MOLECULAR BEAM;

PHOTOLUMINESCENCE;

EID: 35348816159     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2783956     Document Type: Article

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