Preparation and properties of ZnO:Ga films prepared by r.f. magnetron sputtering at low temperature

Applied Surface Science

Volumn 239, Issue 2, 2005, Pages 222-226

  Yu, Xuhu ^a   Ma, Jin ^a   Ji, Feng ^a   Wang, Yuheng ^a   Zhang, Xijian ^a   Cheng, Chuanfu ^b   Ma, Honglei ^a  

^a SHANDONG UNIVERSITY   (China)

^b SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

Electrical and optical properties; Magnetron sputtering; ZnO:Ga films

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; CRYSTALLOGRAPHY; ELECTRIC CONDUCTIVITY; GALLIUM; LIQUID CRYSTAL DISPLAYS; LOW TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; PHOTONS; POLYCRYSTALLINE MATERIALS; PYROLYSIS; SEMICONDUCTOR DOPING; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

ELECTRICAL AND OPTICAL PROPERTIES; TRANSPARENT CONDUCTIVE OXIDE FILMS (TCO); WURTZITE STRUCTURE; ZNO:GA FILMS;

CONDUCTIVE FILMS;

EID: 10444235836     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.266     Document Type: Article

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