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Journal of Vacuum Science and Technology B

Volumn 29, Issue 2, 2011, Pages

Impacts of anisotropic tilt mosaics of state-of-the-art m -plane freestanding GaN substrates on the structural and luminescent properties of m -plane Alx Ga1-x N epilayers

(5) Hazu, K a Kagaya, M a Hoshi, T a Onuma, T a Chichibu, S F a

a TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ANISOTROPY; COMPLEX NETWORKS; ELECTRIC NETWORK ANALYSIS; EPILAYERS; FILM GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; LUMINESCENCE; MOLECULAR BEAM EPITAXY; POSITIVE IONS; SEMICONDUCTOR QUANTUM WELLS; THICK FILMS;

BASAL PLANE STACKING FAULTS; CHARACTERISTIC EMISSION; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; FREESTANDING GAN SUBSTRATES; NEAR BAND EDGE EMISSIONS; POSITRON ANNIHILATION TECHNIQUE; TIME-RESOLVED PHOTOLUMINESCENCE; TRANSMISSION ELECTRON DIFFRACTION;

GALLIUM NITRIDE;

EID: 79953769363 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3566010 Document Type: Article

Times cited : (6)

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