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Volumn 189-190, Issue , 1998, Pages 390-394

Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

(10) Okumura, H a Hamaguchi, H b Koizumi, T c Balakrishnan, K a Ishida, Y a Arita, M b Chichibu, S b Nakanishi, H b Nagatomo, T c Yoshida, S a

a ELECTROTECHNICAL LABORATORY (Japan)

b TOKYO UNIVERSITY OF SCIENCE (Japan)

c SHIBAURA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Atomic nitrogen; Cathodeluminescence; Cubic III nitrides; Photoreflectance; Plasma assisted MBE; X ray diffraction

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL ORIENTATION; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; NITRIDES; PLASMA SOURCES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY CRYSTALLOGRAPHY;

GAS SOURCE MOLECULAR BEAM EPITAXY; RADIOFREQUENCY NITROGEN PLASMA;

SEMICONDUCTOR GROWTH;

EID: 0032094136 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00321-2 Document Type: Article

Times cited : (76)

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