Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors

Applied Physics Express

Volumn 2, Issue 1, 2009, Pages 0110011-0110012

  Fujiwara, Tetsuya ^a   Rajan, Siddharth ^a   Keller, Stacia ^a   Higashiwaki, Masataka ^a   Speck, James S ^a   Denbaars, Steven P ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; GALLIUM NITRIDE; TRANSISTORS;

ALGAN/GAN HETEROJUNCTION; ENHANCEMENT MODE (E MODE); M PLANE; MODE OPERATION; NON-POLAR; SOURCE CURRENTS; SOURCE VOLTAGES;

FIELD EFFECT TRANSISTORS;

EID: 58449102114     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.011001     Document Type: Article

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