AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4nm

Applied Physics Express

Volumn 3, Issue 1, 2010, Pages

  Tyagi, Anurag ^a   Farrell, M Robert ^a   Kelchner, Kathryn M ^a   Huang, Chia Yen ^a   Hsu, Po Shan ^a   Haeger, Daniel A ^a   Hardy, Matthew T ^a   Holder, Casey ^a   Fujito, Kenji ^b   Cohen, Daniel A ^a   Ohta, Hiroaki ^a   Speck, James S ^a   DenBaars, Steven P ^a   Nakamura, Shuji ^a  

^a University of California   (United States)

^b MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; CHARACTERISTIC TEMPERATURE; EPITAXIAL STRUCTURE; ETCHED FACET; GAN BASED LASER DIODES; GAN SUBSTRATE; HIGH REFLECTIVITY; III-NITRIDE; LASER DIODES; LASING WAVELENGTH; PULSED OPERATION; RED SHIFT; SEMIPOLAR; TRANSVERSE OPTICAL MODES; WAVE-GUIDING;

GALLIUM NITRIDE; LASER CLADDING;

GALLIUM ALLOYS;

EID: 74849111497     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.011002     Document Type: Article

References (22)

1. U. Steegmueller et al.: Proc. SPIE 7198 (2009) 719807.
2. D. S. Sizov et al.: Opt. Lett. 34 (2009) 328.
3. D. Queren et al.: Appl. Phys. Lett. 94 (2009) 081119.
4. A. Avramescu et al.: Appl. Phys. Lett. 95 (2009) 071103.
5. T. Miyoshi et al.: Appl. Phys. Express 2 (2009) 062201.
6. J. S. Speck and S. F. Chichibu: MRS Bull. 34 (2009) No. 5, 304.
7. Y. D. Lin et al.: Appl. Phys. Express 2 (2009) 082102.
8. K. Okamoto et al.: Appl. Phys. Lett. 94 (2009) 071105.
9. A. Tyagi et al.: Appl. Phys. Express 1 (2008) 091103.
10. D. S. Sizov et al.: Appl. Phys. Express 2 (2009) 071001.
11. Y. Enya et al.: Appl. Phys. Express 2 (2009) 082101.
12. Y. Yoshizumi et al.: Appl. Phys. Express 2 (2009) 092101. S.-H. Park: Jpn. J. Appl. Phys. 42 (2003) L170.
13. A. M. Fischer et al.: Appl. Phys. Express 2 (2009) 041002.
14. M. E. Aumer et al.: Appl. Phys. Lett. 75 (1999) 3315.
15. Y. Liu et al.: J. Cryst. Growth 259 (2003) 245.
16. S. Zhou et al.: Thin Solid Films 515 (2006) 1429.
17. T. Yu et al.: J. Cryst. Growth 298 (2007) 211.
18. K. M. Kelchner et al.: Appl. Phys. Express 2 (2009) 071003.
19. C-Y. Huang et al.: to be published in J. Appl. Phys.
20. R. M. Farrell et al.: Jpn. J. Appl. Phys. 46 (2007) L761.
21. K. M. Kelchner et al.: presented at 8th Int. Conf. Nitride Semiconductors (ICNS-8), 2009.
22. U. Strauß et al.: Proc. SPIE 6894 (2008) 689417.