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Applied Physics Letters

Volumn 97, Issue 20, 2010, Pages

Major impacts of point defects and impurities on the carrier recombination dynamics in AlN

(4) Chichibu, S F a Onuma, T a Hazu, K a Uedono, A b

a TOHOKU UNIVERSITY (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; CARRIER RECOMBINATION DYNAMICS; DEFECT MANAGEMENT; DEFECTS AND IMPURITIES; HEAVILY DOPED; HIGH-TEMPERATURE GROWTH; LOW TEMPERATURES; NON-RADIATIVE LIFETIMES; POSITRON ANNIHILATION MEASUREMENTS; RADIATIVE LIFETIME; ROOM TEMPERATURE; TEMPERATURE RISE; THREADING DISLOCATION DENSITIES; TIME-RESOLVED SPECTROSCOPY; VACANCY CONCENTRATION;

LASER SPECTROSCOPY; POINT DEFECTS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS;

DEFECTS;

EID: 78649271159 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3517484 Document Type: Article

Times cited : (39)

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