Structure investigations of nonpolar GaN layers

Journal of Microscopy

Volumn 237, Issue 3, 2010, Pages 308-313

  Neumann, W ^a   Mogilatenko, A ^a   Wernicke, T ^b   Richter, E ^b   Weyers, M ^b   Kneissl, M ^b,c  

^a HUMBOLDT UNIVERSITY   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Crystal defects; GaN; Nonpolar films

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; III-V SEMICONDUCTORS; LITHIUM COMPOUNDS; STACKING FAULTS;

BASAL PLANE STACKING FAULTS; COMPLEX DEFECTS; GAN LAYERS; NON-POLAR; NONPOLAR FILM; NONPOLAR M-PLANE; PLANAR DEFECT; THREADING DISLOCATION; Γ-LIALO 2;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRATE;

ARTICLE; CRYSTAL STRUCTURE; DENSITY; ELECTRON DIFFRACTION; FILM; PRIORITY JOURNAL; PRISM; STRUCTURE ANALYSIS; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 77149160064     PISSN: 00222720     EISSN: 13652818     Source Type: Journal    
DOI: 10.1111/j.1365-2818.2009.03249.x     Document Type: Article

References (23)

1. Armitage, R. Hirayama, H. (2008) M-plane GaN grown on m-sapphire by metalorganic vapour phase epitaxy. Appl. Phys. Lett. 92, 0921121.
2. Craven, M.D., Lim, S.H., Wu, F., Speck, J.S. DenBaars, S.P. (2002) Structural characterization of nonpolar (11 0) a-plane GaN thin films grown on (1 02) r-plane sapphire. Appl. Phys. Lett. 81, 469 471.
3. Craven, M.D., Wu, F., Chakraborty, A., Imer, B., Mishra, U.K., DenBaars, S.P. Speck, J.S. (2004) Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition. Appl. Phys. Lett. 84, 1281 1283.
4. Grzegory, I., Lucznik, B., Bockowski, M. Porowski, S. (2007) Crystallization of low dislocation density GaN by high-pressure solution and HVPE methods. J. Cryst. Growth 300, 17 25.
5. Haskell, B.A., Chakraborty, A., Wu, F., Sasano, H., Fini, P.T., DenBaars, S.P., Speck, J.S. Nakamura, S. (2005) Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy. J. Electr. Mater. 34 357 360.
6. 2. MRS Int. J. Nitride Semicond. Res. 2, 30.
7. Hull, D. Bacon, D.J. (1984) Introduction to dislocations. International Series on Materials Science and Technology, vol. 37, 3rd edn., Pergamon Press, pp. 114 115.
8. 2. Mat. Res. Soc. Proc. 764, C6.6.
9. Kröger, R., Paskova, T. Rosenauer, A. (2007) Interaction of Stacking faults in Wurtzite a-plane GaN on r-plane Sapphire. Proceedings of the 15th Conference on Microscopy of Semiconducting Materials (ed. by A.G. Cullis & P.A. Midgley Springer Proceedings in Physics, vol. 120, pp. 49 52.
10. Liliental-Weber, Z., Jasinski, J. Zakharov, D.H. (2004) GaN grown in polar and non-polar directions. Opto-Electron. Rev. 12, 339 346.
11. 2 by plasma-assisted molecular beam epitaxy. Philos. Mag. Lett. 84, 435 441.
12. Maruska, H.P., Hill, D.W., Chou, M.C., Gallagher, J.J. Chai, B.H. (2003) Free-standing non-polar gallium nitridesubstrates. Opto-Electron. Rev. 11, 7 17.
13. McLaurin, M., Mates, T.E. Speck, J.S. (2005) Molecular-beam epitaxy of p-type m-plane GaN. Appl. Phys. Lett. 86, 262104.
14. 2. J. Appl. Phys. 102, 023519.
15. 2(100). Accepted to Phys. Stat. Sol. (c) 5, 3712 3715.
16. Northrup, J.E., Neugebauer, J. Romano, L.T. (1996) Inversion domain and stacking mismatch boundaries in GaN. Phys. Rev. Lett. 77, 103 106.
17. Richter, E., Hennig, Ch., Zeimer, U., et al 2006) Freestanding two inch c-plane GaN layers grown on (100)γ-lithium aluminium oxide by hydride vapour phase epitaxy. Phys. Stat. Sol. (c) 3, 1439 1443.
18. Ruterana, P., Barbaray, B., Béré, A., et al 1999) Formation mechanism and relative stability of the {11 0} stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides. Phys. Rev. B 59, 15917 15925.
19. Takeuchi, T., Amano, H. Akasaki, I. (2000) Theoretical study of orientation dependence of piezoelectric effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells. Jpn. J. Appl. Phys. 39, 413 416.
20. 2. J. Cryst. Growth 310, 214 220.
21. Vennéguès, P., Mathal, F. Bougrioua, Z. (2006) Characterization of structural defects in (11 0) GaN films grown on (1 02) sapphire substrates. Phys. Stat. Sol. (c) 3, 1658 1661.
22. Waltereit, P., Brandt, O., Trampert, A., Grahn, H.T., Menniger, J., Ramsteiner, M., Reiche, M. Ploog, K.H. (2000) Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes. Nature 406, 865 868.
23. Zakharov, D.N. Liliental-Weber, Z. (2005) Structural TEM study of nonpolar a-plane gallium nitride grown on (11 0) 4H-SiC by organometallic vapour phase epitaxy. Phys. Rev. B 71, 235334.